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LTC1693-5 High Speed Single P-Channel MOSFET Driver
FEATURES
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DESCRIPTIO
Single MOSFET Driver in MSOP Package 1.5A Peak Output Current 16ns Rise/Fall Times at VCC = 12V, CL = 1nF Wide VCC Range: 4.5V to 13.2V CMOS Compatible Input with Hysteresis Input Threshold Is Independent of VCC Driver Input Can Be Driven Above VCC Undervoltage Lockout Thermal Shutdown
The LTC(R)1693-5 drives power P-channel MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. The LTC1693-5 is a single driver with an output polarity select pin. The MOSFET driver offers VCC independent CMOS input thresholds with 1.2V of typical hysteresis. It can level-shift the input logic signal up or down to the railto-rail VCC drive for the external MOSFET. The LTC1693-5 contains an undervoltage lockout circuit and a thermal shutdown circuit that disables the external P-channel MOSFET gate drive if activated. The LTC1693-5 comes in an 8-lead MSOP package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
APPLICATIO S
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Power Supplies High Side Drivers Motor/Relay Control Line Drivers Battery Chargers
TYPICAL APPLICATIO
High Efficiency 1.5A Li-Ion Battery Charger
VIN 5V TO 6V POSITION CAPACITOR CLOSE TO LTC1732 MBRS130LT3
332
332 8 VCC
1F
0.47F 0.082 0.25W 22F CERAMIC 4.7 8 POSITION CAPACITOR CLOSE TO SENSE RESISTOR Si2305DS MBRS130LT3 18.2k
SENSE LTC1732 3 10 4 CHRG ACPR TIMER GND SEL 5 0.1F AVX 0603ZC104KAT1A USE LOW TEMPERATURE COEFFICIENT CAPACITOR 2 VCC SEL DRV BAT PROG
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7 1 6
1 LTC1693-5CMS8 4
37
22F CDRH6D38-220NC
1-CELL Li-Ion BATTERY
+ -
+
100F
1693-5 TA01
CHARGE RATE 1.5A (DEPENDING ON VIN AND BATTERY VOLTAGE)
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LTC1693-5
ABSOLUTE MAXIMUM RATINGS
(Note 1)
PACKAGE/ORDER INFORMATION
TOP VIEW IN NC PHASE GND 1 2 3 4 8 7 6 5 VCC OUT NC NC
Supply Voltage (VCC) .............................................. 14V Inputs (IN, PHASE) ................................... - 0.3V to 14V Driver Output ................................. - 0.3V to VCC + 0.3V Junction Temperature .......................................... 150C Operating Temperature Range ..................... 0C to 70C Storage Temperature Range ................. - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC1693-5CMS8 MS8 PART MARKING LTSG
MS8 PACKAGE 8-LEAD PLASTIC MSOP TJMAX = 150C, JA = 200C/ W
Consult factory for parts specified with wider operating temperature ranges.
The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 12V, unless otherwise noted.
SYMBOL PARAMETER VCC ICC ICC(SW) Input VIH VIL IIN VPH IPH Output VOH VOL RONL RONH IPKL IPKH tRISE tFALL tPLH tPHL High Output Voltage Low Output Voltage Output Pull-Down Resistance Output Pull-Up Resistance Output Low Peak Current Output High Peak Current Output Rise Time Output Fall Time Output Low-High Propagation Delay Output High-Low Propagation Delay COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF
q q q q q q q q
ELECTRICAL CHARACTERISTICS
Supply Voltage Range Quiescent Current Switching Supply Current High Input Threshold Low Input Threshold Input Pin Bias Current PHASE Pin High Input Threshold PHASE Pin Pull-Up Current
CONDITIONS PHASE = 12V, IN = 0V COUT = 4.7nF, fIN = 100kHz
q q
MIN 4.5 200
TYP 360 7.2
MAX 13.2 550 10 3.1 1.7 10 6.5 45
UNITS V A mA V V A V A V
q q q q
2.2 1.1 4.5 10 11.92
2.6 1.4 0.01 5.5 20 11.97 30 2.85 3.00 1.70 1.40 17.5 48.0 16.5 42.0 38.0 40.0 32 35
PHASE = 0V IOUT = -10mA IOUT = 10mA
q
q q
75
Switching Timing (Note 2) 35 85 35 75 70 75 70 75 ns ns ns ns ns ns ns ns
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: All AC timing specificatons are guaranteed by design and are not production tested.
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mV A A
LTC1693-5 TYPICAL PERFOR A CE CHARACTERISTICS
IN Threshold Voltage vs VCC
2.75 TA = 25C
3.00
INPUT THRESHOLD VOLTAGE (V)
INPUT THRESHOLD VOLTAGE (V)
2.50 VIH 2.25 2.00 1.75 1.50 1.25 1.00 5 6 7 9 8 VCC (V) 10 11 12
2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 - 50 -25 0 VIL VIH
INPUT THRESHOLD HYSTERESIS (V)
VIL
PHASE Threshold Voltage vs VCC
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PHASE THRESHOLD VOLTAGE (V)
TA = 25C
5 VPH(H) 4 VPH(L) 3 2 1 0 5 6 7 9 8 VCC (V) 10 11 12
TIME (ns)
18 tFALL 16 14 12 10 5 6 7 9 8 VCC (V) 10 11 12
TIME (ns)
Rise/Fall Time vs COUT
120 TA = 25C VCC = 12V 100 fIN = 100kHz 80 55 50 45 40
TIME (ns)
TIME (ns)
TIME (ns)
60 40 20 0 1 10 100 COUT (pF) 1000 10000
1693-5 G07
tRISE tFALL
UW
1693-5 G01
IN Threshold Voltage vs Ambient Temperature
VCC = 12V
IN Threshold Hysteresis vs Ambient Temperature
1.4 1.3 1.2 VIH-VIL 1.1 1.0 0.9 0.8 - 50 VCC = 12V
50 75 100 25 AMBIENT TEMPERATURE (C)
125
25 75 100 - 25 0 50 AMBIENT TEMPERATURE (C)
125
1693-5 G02
1693-5 G03
Rise/Fall Time vs VCC
24 22 20 tRISE
20
Rise/Fall Time vs Ambient Temperature
TA = 25C COUT = 1nF fIN = 100kHz
19 18 17 16 15 14 13 12 11 10 50 25 0 75 100 -50 -25 AMBIENT TEMPERATURE (C) 125 VCC = 12V COUT = 1nF fIN = 100kHz tRISE
tFALL
1693-5 G04
1693-5 G05
1693-5 G06
Propagation Delay vs VCC
TA = 25C COUT = 1nF fIN = 100kHz tPLH tPHL 40 50 45
Propagation Delay vs Ambient Temperature
VCC = 12V COUT = 1nF fIN = 100kHz
35 30 25 20
tPLH 35 tPHL 30 25
15 10 5 6 7 8 9 VCC (V) 10 11 12 20 - 50 - 25 50 100 25 75 0 AMBIENT TEMPERATURE (C) 125
1693-5 G08
1693-5 G09
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LTC1693-5 TYPICAL PERFOR A CE CHARACTERISTICS
Propagation Delay vs COUT
50
OUTPUT SATURATION VOLTAGE (mV)
TA = 25C VCC = 12V fIN = 100kHz
150 VOL (50mA) 100
40
TIME (ns)
QUIESCENT CURRENT (A)
tPLH 30
tPHL
20 1 10 100 COUT (pF) 1000 10000
1693-5 G10
Switching Supply Current vs COUT
100
SWITCHING SUPPLY CURRENT (mA)
90 80 70
TA = 25C VCC = 12V
50 40 30 20 10 0 1 10 100 COUT (pF) 1000 10000
1693-5 G13
VOL (mV)
60
750kHz
VOH vs Output Current
350 300 250 TA = 25C VCC = 12V POWER DISSIPATION (mW)
VOH (mV)
200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA)
1693-5 G15
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UW
500kHz
Output Saturation Voltage vs Temperature
200
350
Quiescent Current vs VCC
TA = 25C VIN = 0V 300
VCC = 12V VOH (50mA) wrt VCC
250
200
50 VOH (10mA) wrt VCC VOL (10mA) 0 - 55 - 35 -15
150
100
5 25 45 65 85 105 125 TEMPERATURE (C)
1693-5 G11
5
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9 8 VCC (V)
10
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12
1693-5 G12
VOL vs Output Current
300 250 200 VOL 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA)
1693-5 G14
TA = 25C VCC = 12V
200kHz 100kHz 25kHz
Thermal Derating Curve
1400 TJ = 125C 1200 1000 800 600 400 200 0 - 55 - 35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (C)
1693-5 G16
VOH
LTC1693-5
PIN FUNCTIONS
IN (Pin 1): Driver Input. The input has VCC independent thresholds with hysteresis to improve noise immunity. NC (Pins 2, 5, 6): No Connect. PHASE (Pin 3): Output Polarity Select. Connect this pin to VCC or leave it floating for noninverting operation. Ground this pin for inverting operation. The typical PHASE pin input current when pulled low is 20A. GND (Pin 4): Driver Ground. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. OUT (Pin 7): Driver Output. VCC (Pin 8): Power Supply Input. The source of the external P-MOSFET should also connect directly to this pin. This minimizes the AC current path and improves signal integrity.
TI I G DIAGRA
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INPUT RISE/FALL TIME < 10ns INPUT VIH VIL
NONINVERTING OUTPUT OPERATION tr tPLH INVERTING OUTPUT OPERATION 90% 10% tf tPHL tf tPHL
90% 10%
tr tPLH
1693-5 TD
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LTC1693-5
APPLICATIONS INFORMATION
Overview The LTC1693-5 single driver allows 3V- or 5V-based digital circuits to drive power P-channel MOSFETs at high speeds. A power MOSFET's gate-charge loss increases with switching frequency and transition time. The LTC1693-5 is capable of driving a 1nF load with 16ns rise and fall times using a VCC of 12V. This eliminates the need for higher voltage supplies, such as 18V, to reduce the gate charge losses. The LTC1693-5's 360A quiescent current is an order of magnitude lower than most other drivers/buffers. This improves system efficiency in both standby and switching operation. Since a power MOSFET generally accounts for the majority of power loss in a converter, addition of the LT1693-5 to a high power converter design greatly improves efficiency, using very little board space. Input Stage The LTC1693-5 employs 3V CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power P-channel MOSFETs. The LTC1693-5 incorporates a 4V internal regulator to bias the input buffer. This allows the 3V CMOS compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be independent of variations in VCC. The 1.2V hysteresis between VIH and VIL eliminates false triggering due to ground noise during switching transitions. The LTC1693-5's input buffer has a high input impedance and draws less than 10A during standby. Output Stage The LTC1693-5's output stage is essentially a CMOS inverter, as shown by the P- and N-channel MOSFETs in Figure 1 (P1 and N1). The CMOS inverter swings rail-torail, giving maximum voltage drive to the load. This large voltage swing is important in driving external power P-channel MOSFETs, whose RDS(ON) is inversely proportional to its gate overdrive voltage (VGS - VT). The LTC1693-5's peak output currents are 1.4A (P1) and 1.7A (N1) respectively. The N-channel MOSFET (N1) has higher current drive capability so it can charge the power MOSFET's gate capacitance during high-to-low signal transitions. When the power MOSFET's gate is pulled high by the LTC1693-5, its drain voltage is pulled low by its load (e.g., a resistor or inductor). The slew rate of the drain voltage causes current to flow back to the MOSFETs gate through its gate-to-drain capacitance. If the MOSFET driver does not have sufficient source current capability (low output impedance), the current through the power MOSFET's Miller capacitance (CGD) can momentarily pull the gate low, turning the MOSFET back on. Rise/Fall Time Since the power MOSFET generally accounts for the majority of power lost in a converter, it's important to quickly turn it either fully "on" or "off" thereby minimizing the transition time in its linear region. The LTC1693-5 has rise and fall times on the order of 16ns, delivering about 1.4A to 1.7A of peak current to a 1nF load with a VCC of only 12V. The LTC1693-5 rise and fall times are determined by the peak current capabilities of P1 and N1. The predriver, shown in Figure 1 driving P1 and N1, uses an adaptive method to minimize cross-conduction currents. This is done with a 6ns nonoverlapping transition time. N1 is fully turned off before P1 is turned-on and vice-versa using this 6ns buffer time. This minimizes any cross-conduction currents while N1 and P1 are switching on and off yet is short enough to not prolong their rise and fall times.
VCC
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LTC1693-5 P1 CGS OUT POWER MOSFET N1 GND LOAD
1693-5 F01
CGD
Figure 1. Capacitance Seen by OUT During Switching
LTC1693-5
APPLICATIONS INFORMATION
UVLO and Thermal Shutdown The LTC1693-5's UVLO detector disables the input buffer and pulls the output pin to VCC if VCC < 4V. The output remains off from VCC = 1V to VCC = 4V. This ensures that during start-up or improper supply voltage values, the LTC1693-5 will keep the output power P-channel MOSFET off. The LTC1693-5 also has a thermal detector that similarly disables the input buffer and pulls the output pin to VCC if junction temperature exceeds 145C. The thermal shutdown circuit has 20C of hysteresis. This thermal limit helps to shut down the system should a fault condition occur. Input Voltage Range LTC1693-5's input pin is a high impedance node and essentially draws neligible input current. This simplifies the input drive circuitry required for the input. The LTC1693-5 typically has 1.2V of hysteresis between its low and high input thresholds. This increases the driver's robustness against any ground bounce noises. However, care should still be taken to keep this pin from any noise pickup, especially in high frequency switching applications. In applications where the input signal swings below the GND pin potential, the input pin voltage must be clamped to prevent the LTC1693-5's parastic substrate diode from turning on. This can be accomplished by connecting a series current limiting resistor R1 and a shunting Schottky diode D1 to the input pin (Figure 2). R1 ranges from 100 to 470 while D1 can be a BAT54 or 1N5818/9. Bypassing and Grounding LTC1693-5 requires proper VCC bypassing and grounding due to its high speed switching (ns) and large AC currents (A). Careless component placement and PCB trace routing may cause excessive ringing and under/overshoot. To obtain the optimum performance from the LTC1693-5: A. Mount the bypass capacitors as close as possible to the VCC and GND pins. The leads should be shortened as much as possible to reduce lead inductance. It is recommended to have a 0.1F ceramic in parallel with a low ESR 4.7F bypass capacitor. For high voltage switching in an inductive environment, ensure that the bypass capacitors' VMAX ratings are high enough to prevent breakdown. This is especially important for floating driver applications. B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the LTC1693-5 switches 1.5A peak currents and any significant ground drop will degrade signal integrity. C. Plan the ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and output pin. Terminate these two ground traces only at the GND pin of the driver (STAR network). D. Keep the copper trace between the driver output pin and the load short and wide.
INPUT SIGNAL GOING BEL0W GND PIN POTENTIAL
R1
D1
Figure 2. Input Protection Against Negative Input Signals
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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VCC
LTC1693-5
IN
PARASITIC SUBSTRATE DIODE GND
1693-5 F02
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LTC1693-5
PACKAGE DESCRIPTION
0.007 (0.18) 0.021 0.006 (0.53 0.015)
* DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE ** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
RELATED PARTS
PART NUMBER LTC1154 LTC1155/LTC1156 LTC1157 LT 1160/LT1162 LT1161 LTC1163 LT1339 LTC1735 LTC1693-1/LTC1693-2/ LTC1693-3 LTC1981/LTC1982
(R)
DESCRIPTION High Side Micropower MOSFET Drivers Dual Micropower High/Low Side Drivers with Internal Charge Pump 3.3V Dual Micropower High/Low Side Driver Half/Full Bridge N-Channel Power MOSFET Driver Quad Protected High Side MOSFET Driver Triple 1.8V to 6V High Side MOSFET Driver High Power Synchronous DC/DC Controller High Efficiency, Low Noise Current Mode Step-Down DC/DC Controller Single/Dual N-Channel MOSFET Drivers SOT-23 High Side Drivers
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 q FAX: (408) 434-0507 q www.linear-tech.com
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Dimensions in inches (millimeters) unless otherwise noted. MS8 Package 8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 0.004* (3.00 0.102)
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76
5
0.193 0.006 (4.90 0.15)
0.118 0.004** (3.00 0.102)
1 0.043 (1.10) MAX 0 - 6 TYP SEATING PLANE
23
4 0.034 (0.86) REF
0.009 - 0.015 (0.22 - 0.38)
0.0256 (0.65) BSC
0.005 0.002 (0.13 0.05)
MSOP (MS8) 1100
COMMENTS Internal Charge Pump, 4.5V to 48V Supply Range, tON = 80s, tOFF = 28s 4.5V to 18V Supply Range 3.3V or 5V Supply Range Dual Driver with Topside Floating Driver, 10V to 15V Supply Range 8V to 48V Supply Range, tON = 200s, tOFF = 28s 1.8V to 6V Supply Range, tON = 95s, tOFF = 45s Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive 3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET Synchronous Drive 1.5A Peak Output Current, Dual Drivers Permit High/Low Side Drive Integrated Voltage Triplers, 10A Quiescent per Driver
16935f LT/TP 0101 4K * PRINTED IN USA
(c) LINEAR TECHNOLOGY CORPORATION 2001

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